Comparative Studies of -Doped In0.45Al0.55As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au Gates

نویسندگان

  • Ke-Hua Su
  • Wei-Chou Hsu
  • Ching-Sung Lee
  • I-Liang Chen
  • Yeong-Jia Chen
  • Chang-Luen Wu
چکیده

Comparative Studies of -Doped In0.45Al0.55As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au Gates Ke-Hua Su, Wei-Chou Hsu, Ching-Sung Lee, I-Liang Chen, Yeong-Jia Chen, and Chang-Luen Wu Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 70101, Taiwan Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan United Microelectronics Corporation, Tainan Science-Based Industrial Park, Hsin-Shi, Tainan County 744, Taiwan Transcom, Incorporated, Tainan Science-Based Industrial Park, Hsin-Shi, Tainan County 744, Taiwan

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تاریخ انتشار 2006